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BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Rev. 05 -- 26 November 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
FEATURES * High power gain * Low noise figure * Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION NPN transistor in a 4-pin, dual-emitter SOT143B plastic package.
PINNING PIN BFG93A 1 2 3 4 collector base emitter emitter
Top view
MSB014
DESCRIPTION
handbook, 2 columns 4
3
1
2
BFG93A/X 1 2 3 4 collector emitter base emitter
Fig.1 SOT143B.
MARKING TYPE NUMBER BFG93A BFG93A/X CODE R8% %MX
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain Ts 85 C IC = ic = 0; VCB = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz F noise figure s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz open base CONDITIONS open emitter - - - - - 4.5 - - - MIN. - - - - 0.6 6 16 10 1.7 TYP. MAX. 15 12 35 300 - - - - - UNIT V V mA mW pF GHz dB dB dB
Rev. 05 - 26 November 2007
2 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 5 V IC = 30 mA; VCE = 5 V IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 5 V; f = 1 MHz IC = ic = 0; VCB = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz F noise figure s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz Note MIN. - 40 - - - 4.5 - - - - TYP. - 90 0.9 1.9 0.6 6 16 10 1.7 2.3 MAX. 50 - - - - - - - - - pF pF pF GHz dB dB dB dB UNIT nA PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction operating temperature Ts 85 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 15 12 2 35 300 +150 175 V V V mA mW C C UNIT
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 )
Rev. 05 - 26 November 2007
3 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
MBG245
400 handbook, halfpage P tot (mW) 300
handbook, halfpage
120
MCD087
h FE
80
200
40 100
0 0 50 100 150 Ts ( o C) 200
0 0 10 20 IC (mA) 30
VCE = 5 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current; typical values.
handbook, halfpage
1.0
MCD088
handbook, halfpage
8
MCD089
C re (pF) 0.8
fT (GHz) 6
0.6 4 0.4 2 0.2
0 0 4 8 12 VCB (V) 16
0 0 10 20 30 I C (mA) 40
IC = ic = 0; f = 1 MHz.
VCE = 5 V; Tamb = 25 C; f = 500 MHz.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
Rev. 05 - 26 November 2007
4 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
handbook, halfpage
30
MCD090
handbook, halfpage
30
MCD091
gain (dB) 20
MSG
gain (dB)
G UM
20
MSG
G UM 10 10
0
0
10
20
30 I C (mA)
40
0
0
10
20
30 I C (mA)
40
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
50
MCD092
handbook, halfpage
50
MCD093
gain (dB)
gain (dB)
40
G UM
40 MSG
G UM
30
MSG
30
20
20 G max
10
G max
10
0 10 10
2
10
3
f (MHz)
10
4
0 10 10
2
10
3
f (MHz)
10
4
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
Rev. 05 - 26 November 2007
5 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
handbook, halfpage
4
MCD094
handbook, halfpage
4
MCD095
F (dB) 3
f = 2 GHz
F (dB) 3
1 GHz 2 500 MHz 2
I C = 30 mA
1
1
10 mA 5 mA
0 1 10 I C (mA)
10 2
0 10 2
10 3
f (MHz)
10 4
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure as a function of collector current; typical values.
Fig.11 Minimum noise figure as a function of frequency; typical values.
stability circle
handbook, full pagewidth
1 2
0.5
un re sta gio ble n
0.2 OPT +j MSG 0.2 22.2 dB 0.5 F min = 1.4 dB 1 2 5 10
5 10
*
10 5
-j
2 dB 0.2 3 dB 4 dB 0.5 Zo = 50 . Maximum stable gain = 22.2 dB. 1 2
MCD096
Fig.12 Common emitter noise figure circles; typical values.
Rev. 05 - 26 November 2007
6 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
1
handbook, full pagewidth
0.5
2
stability circle 0.2 OPT unstable region +j 0 -j MSG 0.2 10.4 dB 0.5 F min = 2 dB 1 2.5 dB 5 4 dB 6 dB 0.5 1 Zo = 50 . Maximum stable gain = 10.4 dB. 2
MCD097
5
*
10
2
5
10
10
0.2
Fig.13 Common emitter noise figure circles; typical values.
1
handbook, full pagewidth
0.5
2
5 dB 0.2 4 dB 3.5 dB +j OPT -j 0.2 0.5 F min = 3 dB 5 10
*
1
2
5
10
10 5
0.2
G max = 9 dB 8 dB 7 dB 0.5 1 2
*
MCD098
Zo = 50 .
Fig.14 Common emitter noise figure circles; typical values.
Rev. 05 - 26 November 2007
7 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
1
handbook, full pagewidth
0.5
2
3 GHz 0.2 5 10 +j 0 -j 10 40 MHz 0.2 5 0.2 0.5 1 2 5 10
0.5 1 VCE = 8 V; IC = 30 mA; Zo = 50 .
2
MCD099
Fig.15 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
50
40
30
20
10 3 GHz
0o
_
135 o
_ 45 o
VCE = 8 V; IC = 30 mA; Rmax = 50 .
_ 90 o
MCD100
Fig.16 Common emitter forward transmission coefficient (S21).
Rev. 05 - 26 November 2007
8 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
90 o
handbook, full pagewidth
135 o
3 GHz
45 o
180 o
40 MHz 0.04 0.08 0.12 0.16 0.20
0o
_ 135 o
_ 45 o
VCE = 8 V; IC = 30 mA; Rmax = 0.2 .
_ 90 o
MCD102
Fig.17 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0 -j 40 MHz 3 GHz 0.2 5 10 0.2 0.5 1 2 5 10
0.5 1 VCE = 10 V; IC = 15 mA; Zo = 50 .
2
MCD101
Fig.18 Common emitter output reflection coefficient (S22).
Rev. 05 - 26 November 2007
9 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
SPICE parameters for BFR91A(/X) die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (note 1) 20 (note 1) 21 (note 1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (note 1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 1.328 102.0 1.000 51.90 8.155 13.90 15.12 17.69 994.0 3.280 10.00 1.043 1.189 10.00 1.000 10.00 763.6 9.000 0.000 1.110 3.000 2.032 600.0 290.0 6.557 38.97 10.93 521.0 0.000 1.003 340.8 194.2 120.0 3.073 0.000 - - V A fA - - m V A aA - A m - EV - pF mV m ps - V mA deg pF mV m m ns F List of components (see Fig.19) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
E QLB = 50; QLE = 50. QLB,E (f) = QLB,E (f/fc). fc = scaling frequency = 1000 MHz. L3 C be B L1 LB B' E' LE
MBC964
UNIT fA
SEQUENCE No. 36 (note 1) 37 (note 1) 38 Note
PARAMETER VJS MJS FC
VALUE 750.0 0.000 800.0 -
UNIT mV m
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L2 C' C
Cce
Fig.19 Package equivalent circuit SOT143B.
Rev. 05 - 26 November 2007
10 of 13
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Rev. 05 - 26 November 2007
11 of 13
NXP Semiconductors
BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 05 - 26 November 2007
12 of 13
NXP Semiconductors
BFG93A; BFG93A/X
NPN 6 GHz wideband transistors
Revision history
Revision history Document ID BFG93A_X_N_5 Modifications: BFG93A_X_4 (9397 750 04351) BFG93SERIES_3 BFG93SERIES_2 BFG93_SERIES_1 Release date 20071126 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG93A_X_4 BFG93SERIES_3 BFG93SERIES_2 BFG93_SERIES_1 -
*
Marking table on page 2; changed code
19980923 19950925 -
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 November 2007 Document identifier: BFG93A_X_N_5

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